IPD60R600P7S Specs and Replacement
Type Designator: IPD60R600P7S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
IPD60R600P7S substitution
IPD60R600P7S datasheet
ipd60r600p7s.pdf
IPD60R600P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒
ipd60r600p7s.pdf
isc N-Channel MOSFET Transistor IPD60R600P7S,IIPD60R600P7S FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS ... See More ⇒
ipd60r600p7.pdf
IPD60R600P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒
ipd60r600p7.pdf
isc N-Channel MOSFET Transistor IPD60R600P7,IIPD60R600P7 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V... See More ⇒
Detailed specifications: IPD60R180P7S , IPD60R280CFD7 , IPD60R280P7 , IPD60R280P7S , IPD60R360P7 , IPD60R360P7S , IPD60R3K4CE , IPD60R600P7 , 50N06 , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE , IPD65R650CE , IPD70R1K4CE , IPD70R2K0CE , IPD70R600CE .
History: PJZ9NA90 | DMN3009LFVW
Keywords - IPD60R600P7S MOSFET specs
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IPD60R600P7S replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: PJZ9NA90 | DMN3009LFVW
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