All MOSFET. SFP9Z34 Datasheet

 

SFP9Z34 Datasheet and Replacement


   Type Designator: SFP9Z34
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 82 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220
 

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SFP9Z34 Datasheet (PDF)

 ..1. Size:507K  samsung
 sfp9z34.pdf pdf_icon

SFP9Z34

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

 9.1. Size:505K  samsung
 sfp9z24.pdf pdf_icon

SFP9Z34

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.7 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.206 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

 9.2. Size:494K  samsung
 sfp9z14.pdf pdf_icon

SFP9Z34

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.7 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.362 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

Datasheet: SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 , SFP9644 , SFP9Z14 , SFP9Z24 , IRF9640 , SFR2955 , SFR9014 , SFR9024 , SFR9034 , SFR9110 , SFR9120 , SFR9130 , SFR9210 .

Keywords - SFP9Z34 MOSFET datasheet

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