IPD65R650CE PDF and Equivalents Search

 ..1. Size:1158K  infineon
 ipa65r650ce ipd65r650ce.pdf

IPA65R650CE, IPD65R650CE MOSFET TO-220 FP DPAK 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighti... See More ⇒

 ..2. Size:242K  inchange semiconductor
 ipd65r650ce.pdf

isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CE FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 7.1. Size:2158K  infineon
 ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K ... See More ⇒

 7.2. Size:919K  infineon
 ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe... See More ⇒

 7.3. Size:1867K  infineon
 ipd65r600e6.pdf

MOSFET + =L9D - PA... See More ⇒

 7.4. Size:2092K  infineon
 ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K ... See More ⇒

 7.5. Size:4455K  infineon
 ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for hi... See More ⇒

 7.6. Size:1385K  infineon
 ipd65r660cfda.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R660CFDA Data Sheet Rev. 2.1 Final Automotive 650V CoolMOS CFDA Power Transistor IPD65R660CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered ... See More ⇒

 7.7. Size:2092K  infineon
 ipd65r600c6.pdf

MOSFET + =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K ... See More ⇒

 7.8. Size:242K  inchange semiconductor
 ipd65r600e6.pdf

isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 7.9. Size:241K  inchange semiconductor
 ipd65r600c6.pdf

isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V... See More ⇒

 7.10. Size:241K  inchange semiconductor
 ipd65r660cfd.pdf

isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD FEATURES Static drain-source on-resistance RDS(on) 0.66 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒