All MOSFET. IPP60R280P7 Datasheet

 

IPP60R280P7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP60R280P7
   Marking Code: 60R280P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220

 IPP60R280P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP60R280P7 Datasheet (PDF)

 ..1. Size:1666K  infineon
 ipp60r280p7.pdf

IPP60R280P7 IPP60R280P7

IPP60R280P7MOSFETPG-TO 220600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 ..2. Size:245K  inchange semiconductor
 ipp60r280p7.pdf

IPP60R280P7 IPP60R280P7

isc N-Channel MOSFET Transistor IPP60R280P7IIPP60R280P7FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET with excellentease of useABSOLUTE MA

 4.1. Size:2865K  infineon
 ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf

IPP60R280P7 IPP60R280P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPP60R280P6, IPA60R280P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 4.2. Size:2621K  infineon
 ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf

IPP60R280P7 IPP60R280P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 4.3. Size:245K  inchange semiconductor
 ipp60r280p6.pdf

IPP60R280P7 IPP60R280P7

isc N-Channel MOSFET Transistor IPP60R280P6IIPP60R280P6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOT298L | IXFL44N60

 

 
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