All MOSFET. IRFP7530 Datasheet

 

IRFP7530 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP7530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 195 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 274 nC
   trⓘ - Rise Time: 141 nS
   Cossⓘ - Output Capacitance: 1266 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-247

 IRFP7530 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP7530 Datasheet (PDF)

 ..1. Size:540K  international rectifier
 irfp7530pbf.pdf

IRFP7530 IRFP7530

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 ..2. Size:540K  infineon
 irfp7530pbf.pdf

IRFP7530 IRFP7530

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 ..3. Size:242K  inchange semiconductor
 irfp7530.pdf

IRFP7530 IRFP7530

isc N-Channel MOSFET Transistor IRFP7530IIRFP7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement mode:Vth =2.1 to 3.7V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 7.1. Size:538K  international rectifier
 irfp7537pbf.pdf

IRFP7530 IRFP7530

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 7.2. Size:538K  infineon
 irfp7537pbf.pdf

IRFP7530 IRFP7530

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 7.3. Size:247K  inchange semiconductor
 irfp7537.pdf

IRFP7530 IRFP7530

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7537IIRFP7537FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:Vth =2.1 to 3.7 V (VDS=VGS, ID=150A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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