IRFP7530 MOSFET Datasheet: N-Ch, 60V, 195A. Full specification with pinout and replacement list

IRFP7530 Specs and Replacement

Type Designator: IRFP7530

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 341 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 195 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 141 nS

Cossⓘ - Output Capacitance: 1266 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO-247

IRFP7530 substitution

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IRFP7530 datasheet

..1. Size:540K international rectifier
irfp7530pbf.pdf pdf_icon

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup... See More ⇒

..2. Size:242K inchange semiconductor
irfp7530.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP7530 IIRFP7530 FEATURES Static drain-source on-resistance RDS(on) 2m Enhancement mode Vth =2.1 to 3.7V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

7.1. Size:538K international rectifier
irfp7537pbf.pdf pdf_icon

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re... See More ⇒

7.2. Size:247K inchange semiconductor
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