SFR9120 MOSFET Datasheet: P-Ch, 100V, 4.9A. Full specification with pinout and replacement list

SFR9120 Specs and Replacement

Type Designator: SFR9120

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 90 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252

SFR9120 substitution

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SFR9120 datasheet

..1. Size:228K fairchild semi
sfr9120 sfu9120.pdf pdf_icon

SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -4.9 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.444 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒

..2. Size:496K samsung
sfr9120.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.444 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

9.1. Size:250K fairchild semi
sfr9110tf.pdf pdf_icon

SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒

9.2. Size:262K fairchild semi
sfu9130 sfr9130.pdf pdf_icon

SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.225 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒