IRFR812 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR812
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 78 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3.6 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 1.85 Ohm
Package: TO-252
IRFR812 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR812 Datasheet (PDF)
1.1. irfr812trpbf.pdf 
Size:219K _international_rectifier
PD -97773 IRFR812TRPbF HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Uninterruptible Power Supplies 500V 1.85Ω 75ns 3.6A • Motor Control applications D Features and Benefits • Fast body diode eliminates the need for external S diodes in ZVS applications. G • Lower Gate charge results in simpler drive requirements.
1.2. irfr812.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFR812, IIRFR812 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500
5.1. irfr8314pbf.pdf Size:543K _international_rectifier
IRFR8314PbF HEXFET® Power MOSFET Application VDSS 30 V D Optimized for UPS/Inverter Applications RDS(on) max Low Voltage Power Tools 2.2 (@ VGS = 10V) m G (@ VGS = 4.5V) 3.1 S Qg (typical) 40 nC Benefits ID (Silicon Limited) 179 Fully Characterized Avalanche Voltage and Current A ID (Package Limited) 90A Lead-Free, RoHS Co
5.2. irfr825trpbf.pdf Size:207K _international_rectifier
PD - 96433A IRFR825TRPbF HEXFET® Power MOSFET Applications Trr typ. VDSS RDS(on) typ. ID • Zero Voltage Switching SMPS • Uninterruptible Power Supplies 500V 1.05Ω 92ns 6.0A • Motor Control applications D Features and Benefits • Fast body diode eliminates the need for external S diodes in ZVS applications. G • Lower Gate charge results in simpler drive requirements.
5.3. auirfr8401 auirfu8401.pdf Size:453K _international_rectifier
AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET® Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m 175°C Operating Temperature 4.25m G max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID
5.4. auirfr8405 auirfu8405.pdf Size:292K _international_rectifier
AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) typ. 1.65mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 1.98mΩ l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Silicon Limited) 211A Description Specifically designed for A
5.5. auirfr8403 auirfu8403.pdf Size:279K _international_rectifier
AUIRFR8403 AUIRFU8403 AUTOMOTIVE GRADE Features HEXFET® Power MOSFET l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.4m Ω l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 3.1m Ω G l Lead-Free, RoHS Compliant ID (Silicon Limited) 127A l Automotive Qualified * Description S ID (Package L
5.6. irfr825tr.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFR825TR,IIRFR825TR ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 5
5.7. irfr8314.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for UPS/Inverter Applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
