MDP1922 MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP1922
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 157 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 97 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0084 Ohm
Package: TO-220C
MDP1922 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP1922 Datasheet (PDF)
1.1. mdp1922th.pdf 
Size:206K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP1922TH ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM
1.2. mdp1922.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor MDP1922 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be suitable for DC/DC converters and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM
1.3. mdp1922th.pdf Size:899K _magnachip
MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4mΩ General Description Features The MDP1922 uses advanced MagnaChip’s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1922 is suitable device for DC/DC Converter < 8.4 mΩ @V = 10
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
