2N3970 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N3970
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
   Package: TO-18

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFP7530 | SVS65R280FJDD4 | IRF9630S | 25P06 | ECH8410