2N3970 Specs and Replacement

Type Designator: 2N3970

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm

Package: TO-18

2N3970 substitution

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2N3970 datasheet

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Detailed specifications: SPA11N60C3E8185, SPD30N03S2L, SPD50N03S2, SUD70090E, 2N3380, 2N3382, 2N3384, 2N3386, AOD4184A, 2N3971, 2N3972, 2N4342, 2N4343, 2N4360, 2N4393C1A, 2N4393C1B, 2N4393C1C

Keywords - 2N3970 MOSFET specs

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