2N5116UBE3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N5116UBE3
   Type of Transistor: JFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   trⓘ - Rise Time: 35 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 175 Ohm
   Package: TO-18

2N5116UBE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS