2N7002DCSM Specs and Replacement
Type Designator: 2N7002DCSM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 11 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: LCC2
- MOSFET ⓘ Cross-Reference Search
2N7002DCSM datasheet
..1. Size:16K semelab
2n7002dcsm.pdf 
2N7002DCSM MECHANICAL DATA Dimensions in mm (inches) DUAL N CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 1 4 V(BR)DSS = 60V A 0.23 6 5 rad. (0.009) RDS(ON) = 7.5 6.22 0.13 A = 1.27 0.13 (0.05 0.005) (0.245 0.005) ID = 0.115A CERAMIC LCC2 PA... See More ⇒
7.1. Size:257K fairchild semi
2n7002dw.pdf 
October 2007 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking 2N Absolute Maximum Ratings * Ta = 25 C un... See More ⇒
7.2. Size:84K diodes
2n7002dw.pdf 
2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Termina... See More ⇒
7.3. Size:443K infineon
2n7002dw.pdf 
2N7002DW OptiMOS Small-Signal-Transistor Product Summary Features VDS 60 V Dual N-channel RDS(on),max VGS=10 V 3 W Enhancement mode Logic level VGS=4.5 V 4 Avalanche rated ID 0.3 A Fast switching Qualified according to AEC Q101 PG-SOT363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type ... See More ⇒
7.4. Size:909K mcc
2n7002dw.pdf 
MCC Micro Commercial Components TM 2N7002DW 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 N-Channel MOSFET High density cell design for low RDS(ON) Rugged and r... See More ⇒
7.5. Size:435K onsemi
2n7002dw.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
7.6. Size:285K utc
2n7002dw.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Co... See More ⇒
7.7. Size:247K secos
s2n7002dw.pdf 
S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363 MECHANICAL DATA Case SOT-363 Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals Solderable per MIL-STD-202, Method 208 Weight 0.006 grams(approx.) DEVICE MARKING 702 PACKAGE INF... See More ⇒
7.8. Size:1426K jiangsu
2n7002dw.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW Dual N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 5 @10V 60V 115mA @5V 7 APPLICATION FEATURE High density cell design for low RDS(ON) Load Switch for Portable Devices DC/DC Converter Voltage controlled small signal switch Rugged and reliable High ... See More ⇒
7.9. Size:212K wietron
2n7002dw.pdf 
2N7002DW Dual N-Channel MOSFET 6 5 4 1 2 3 Features * We declare that the material of product are Halogen Free and SOT-363(SC-88) compliance with RoHS requirements. * ESD Protected 1000V 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage RGS... See More ⇒
7.10. Size:375K willas
2n7002dw1t1.pdf 
FM120-M WILLAS THRU 2N7002DW1T1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Small Signal MOSFET 115 mAmps,60 Volts SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers N Channel SOT-363 better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted app... See More ⇒
7.11. Size:570K lrc
l2n7002dw1t1g s-l2n7002dw1t1g.pdf 
L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60V N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 1000V 2. DE... See More ⇒
7.12. Size:446K lrc
l2n7002dmt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N Channel SC 74 We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value Unit SC-74 Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 115 mAMPS Drain Current ID 115 mAdc Continuous TC = 25 C (Note 1... See More ⇒
7.13. Size:296K lrc
l2n7002dw1t1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N Channel SC-88 Pb-Free Package is Available. ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Drain Current ID 115 mAdc ID 75 - Continuous TC = 25 C (Note 1) IDM 800 - Continuo... See More ⇒
7.15. Size:174K panjit
2n7002dw.pdf 
2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU Ro... See More ⇒
7.16. Size:454K ait semi
am2n7002dw.pdf 
AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package. ESD Protected 1000V Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V Halogen free Package Note R Tape & Reel SPQ ... See More ⇒
7.17. Size:147K chenmko
2n7002dsgp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2N7002DSGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High density cell design for low RDS(ON). * Suitable for high packing density. (1) (6) *... See More ⇒
7.18. Size:1630K matsuki electric
me2n7002d.pdf 
ME2N7002D N-Channel MOSFET ESD Protected GENERAL DESCRIPTION FEATURES Simple Drive Requirement The ME2N7002D is the N-Channel logic enhancement mode power Small Package Outline field effect transistors are produced using high cell density , DMOS ROHS Compliant trench technology. This high density process is especially tailored to ESD Rating = 2000V HBM min... See More ⇒
7.19. Size:311K tiptek
s2n7002dm.pdf 
S2N7002DM SMALL SIGNAL MOSFET 115mA 60V N-CHANNEL FEATURES FAST SWITCHING SPEED. EASILY DESIGNED DRIVE CIRCUITS. LOW ON-RESISTANCE ESD PROTECTED 1000V MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free S2N7002DM Halogen Free S2N7002DM-H CASE SOT-23-6L DIMENSIONS IN MILLIMETERS AND (INCHES) ABSOLUTE MAXIMUM RATINGS RATINGS AT 25 C AMBIEN... See More ⇒
7.20. Size:413K cn yangzhou yangjie elec
2n7002dw.pdf 
RoHS COMPLIANT 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /... See More ⇒
Detailed specifications: 2N7002-7, 2N7002-7-F, 2N7002BKMB, 2N7002C1A, 2N7002C1B, 2N7002C1C, 2N7002C1D, 2N7002CSM, 12N60, 2N7002DSGP, 2N7002EGP, 2N7002ESEGP, 2N7002ESGP, 2N7002-G, 2N7002GP, 2N7002GP-A, 2N7002KT1G
Keywords - 2N7002DCSM MOSFET specs
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