2N7002SESGP MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7002SESGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.64 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT-363
2N7002SESGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7002SESGP Datasheet (PDF)
2n7002sesgp.pdf
CHENMKO ENTERPRISE CO.,LTD2N7002SESGPSURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 AmpereAPPLICATION* Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems. FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363). * 60V/0.5A, RDS(ON)=2ohm at VGS=10V* Super high d
h2n7002sn.pdf
Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol
l2n7002sdw1t1g l2n7002sdw1t3g.pdf
L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS
l2n7002swt1g s-l2n7002swt1g.pdf
L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R
l2n7002slt1g l2n7002slt3g.pdf
L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS
2n7002ssgp.pdf
CHENMKO ENTERPRISE CO.,LTD2N7002SSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(G1)
2n7002sgp.pdf
CHENMKO ENTERPRISE CO.,LTD2N7002SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(S1)
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