2N7219U Specs and Replacement

Type Designator: 2N7219U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SMD-1

2N7219U substitution

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2N7219U datasheet

 ..1. Size:165K  international rectifier
 2n7219u.pdf pdf_icon

2N7219U

PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- ... See More ⇒

 8.1. Size:64K  omnirel
 2n7218 2n7219 2n7221 2n7222.pdf pdf_icon

2N7219U

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L... See More ⇒

 9.1. Size:21K  semelab
 2n7218u.pdf pdf_icon

2N7219U

IRFN140 SEME 2N7218U LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE RE... See More ⇒

Detailed specifications: 2N7002WSK, 2N7002W-TP, 2N7002X, 2N7081-220M-ISO, 2N7089, 2N7090, 2N7092, 2N7218U, IRFZ24N, 2N7221U, 2N7222, 2N7222U, 2N7224U, 2N7225U, 2N7227U, 2N7228U, 2N7236U

Keywords - 2N7219U MOSFET specs

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