2N7295 Datasheet. Specs and Replacement
Type Designator: 2N7295 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO-204AA
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2N7295 datasheet
2n7291 2n7293 2n7295 2n7297.pdf
INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606B be completed by 28 October 2004. 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729... See More ⇒
jansr2n7292.pdf
JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P... See More ⇒
jansr2n7294.pdf
JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P... See More ⇒
Detailed specifications: 2N7269, 2N7269U, 2N7272, 2N7275, 2N7278, 2N7281, 2N7291, 2N7293, 60N06, 2N7297, 2N7334, 2N7335, 2N7335E3, 2N7380, 2N7381, 2N7394, 2N7394U
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