2N7394U Datasheet and Replacement

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Qualified per MIL-PRF-19500/603 DEVICES LEVELS MSR (100K RAD(Si)) 2N7394 2N7394UMSF (300K RAD(Si))

JANSR2N7398Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Even

JANSR2N7396Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t

JANSR2N7395Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Ev

JANSR2N7399Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)