2N7394U MOSFET PDF: N-Ch, 60V, 35A. Datasheet. Full specification with pinout and replacement list

2N7394U Specs and Replacement

   Type Designator: 2N7394U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SMD-1

2N7394U substitution

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2N7394U datasheet

..1. Size:166K microsemi
2n7394 2n7394u.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Qualified per MIL-PRF-19500/603 DEVICES LEVELS MSR (100K RAD(Si)) 2N7394 2N7394U MSF (300K RAD(Si)) ... See More ⇒

9.1. Size:53K intersil
jansr2n7398.pdf pdf_icon

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even... See More ⇒

9.2. Size:52K intersil
jansr2n7396.pdf pdf_icon

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t... See More ⇒

9.3. Size:53K intersil
jansr2n7395.pdf pdf_icon

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev... See More ⇒