All MOSFET. 2N7394U Datasheet

 

2N7394U MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7394U

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 200 nC

Rise Time (tr): 100 nS

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: SMD-1

2N7394U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7394U Datasheet (PDF)

1.1. 2n7394 2n7394u.pdf Size:166K _update-mosfet

2N7394U
2N7394U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Qualified per MIL-PRF-19500/603 DEVICES LEVELS MSR (100K RAD(Si)) 2N7394 2N7394U MSF (300K RAD(Si))

5.1. jansr2n7396.pdf Size:52K _intersil

2N7394U
2N7394U

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 5A, 200V, rDS(ON) = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t

5.2. jansr2n7395.pdf Size:53K _intersil

2N7394U
2N7394U

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 8A, 100V, rDS(ON) = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev

 5.3. jansr2n7399.pdf Size:52K _intersil

2N7394U
2N7394U

JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 11A, 100V, rDS(ON) = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)

5.4. jansr2n7398.pdf Size:53K _intersil

2N7394U
2N7394U

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, rDS(ON) = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


2N7394U
  2N7394U
  2N7394U
 

social 

LIST

Last Update

MOSFET: IRFP257 | IRFP256 | FIR4N65F | 40N20 | 2SK767 | 2SK766 | 2SK763 | 2SK759 | 2SK757 | 2SK756 | 2SK755 | 2SK754 | 2SK753 | 2SK752 | 2SK751 |

 

 

 
Back to Top