2N7394U MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7394U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 200 nC
Rise Time (tr): 100 nS
Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm
Package: SMD-1
2N7394U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7394U Datasheet (PDF)
1.1. 2n7394 2n7394u.pdf 
Size:166K _update-mosfet
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Qualified per MIL-PRF-19500/603 DEVICES LEVELS MSR (100K RAD(Si)) 2N7394 2N7394U MSF (300K RAD(Si))
5.1. jansr2n7396.pdf Size:52K _intersil
JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 5A, 200V, rDS(ON) = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t
5.2. jansr2n7395.pdf Size:53K _intersil
JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 8A, 100V, rDS(ON) = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev
5.3. jansr2n7399.pdf Size:52K _intersil
JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 11A, 100V, rDS(ON) = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)
5.4. jansr2n7398.pdf Size:53K _intersil
JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, rDS(ON) = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
