SFS9624
MOSFET. Datasheet pdf. Equivalent
Type Designator: SFS9624
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4
Ohm
Package:
TO220F
SFS9624
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFS9624
Datasheet (PDF)
..1. Size:502K samsung
sfs9624.pdf 
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 1.65 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
8.1. Size:501K samsung
sfs9620.pdf
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 1.111 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
9.1. Size:256K fairchild semi
sfs9634.pdf
SFS9634Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.4 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
9.2. Size:502K samsung
sfs9630.pdf
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
9.3. Size:505K samsung
sfs9640.pdf
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
9.4. Size:499K samsung
sfs9634.pdf
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
9.5. Size:503K samsung
sfs9644.pdf
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
9.6. Size:491K samsung
sfs9610.pdf
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 2.25 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
9.7. Size:499K samsung
sfs9614.pdf
Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.27 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 3.5 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
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