2N6661-2 Specs and Replacement

Type Designator: 2N6661-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.725 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-39

2N6661-2 substitution

- MOSFET ⓘ Cross-Reference Search

 

2N6661-2 datasheet

 ..1. Size:125K  vishay
2n6661-2.pdf pdf_icon

2N6661-2

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 90 Low On-Resistence 3.6 RDS(on) ( ) at VGS = 10 V 4 Low Threshold 1.6 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 6 ns TO-205AD Low Input and Output Leakage (TO-39... See More ⇒

 8.1. Size:73K  vishay
2n6661 vn88afd.pdf pdf_icon

2N6661-2

2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 3.6 W D Low Offset Voltage D Direct Logic-Level Interface TTL/CMOS D Low Threshold 1.6 V D Low-Voltage O... See More ⇒

 8.2. Size:369K  supertex
2n6661.pdf pdf_icon

2N6661-2

Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertex s well-proven silicon-gate manufacturing Ease of paralleling process. This combination produc... See More ⇒

 8.3. Size:21K  supertex
2n6660 2n6661.pdf pdf_icon

2N6661-2

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0 1.5A 2N6660 90V 4.0 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Informa... See More ⇒

Detailed specifications: 2N60AF, 2N60G, 2N6568, 2N6659-2, 2N6659X, 2N6660-2, 2N6660C4A, 2N6660CSM4, 2SK3878, 2N6661CSM4, 2N6661DCSM, 2N6661M1A, 2N6782U, 2N6784U, 2N6786U, 2N6788L, 2N6788LCC4

Keywords - 2N6661-2 MOSFET specs

 2N6661-2 cross reference

 2N6661-2 equivalent finder

 2N6661-2 pdf lookup

 2N6661-2 substitution

 2N6661-2 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility