2N6661CSM4 Datasheet and Replacement

2N6661CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13ENHANCEMENT MODE (0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.V 90V(0.009)DSS3 2I 0.9AD0.234 1min.(0.009)R 4.0 DS(on)FEATURES 1.02 0.20 2.03 0.20(0.04 0.008) (0.08 0.008) Faster switching Low Ciss

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXVwww.vishay.comVishay SiliconixN-Channel 90 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 90 Low On-Resistence: 3.6 RDS(on) () at VGS = 10 V 4 Low Threshold: 1.6 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 6 nsTO-205AD Low Input and Output Leakage(TO-39

2N6661/VN88AFDVishay SiliconixN-Channel 80-V and 90-V (D-S) MOSFETSPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOSD Low Threshold: 1.6 V D Low-Voltage O

Supertex inc.2N6661N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6661 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produc

2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Informa

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

2N6661DCSM MECHANICAL DATA DUAL NCHANNEL Dimensions in mm (inches) ENHANCEMENT MODE 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)MOSFET 2 3VDSS 90V 1 4ID 0.9A A0.236 5rad.RDS(on) 4.0 (0.009)6.22 0.13 A = 1.27 0.13(0.05 0.005)(0.245 0.005)FEATURES Faster switching Low Ciss In