All MOSFET. SFS9Z14 Datasheet

 

SFS9Z14 Datasheet and Replacement


   Type Designator: SFS9Z14
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F
 

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SFS9Z14 Datasheet (PDF)

 ..1. Size:231K  fairchild semi
 sfs9z14.pdf pdf_icon

SFS9Z14

SFS9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen 175oC Operating TemperatureTO-220Fn Extended Safe Operating Arean Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)1231.Gate 2. Drain 3. Source

 9.1. Size:281K  fairchild semi
 sfs9z24.pdf pdf_icon

SFS9Z14

SFS9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.5 An Improved Gate Chargen 175oC Operating TemperatureTO-220Fn Extended Safe Operating Arean Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)1231.Gate 2. Drain 3. Sourc

 9.2. Size:504K  samsung
 sfs9z34.pdf pdf_icon

SFS9Z14

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -12 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

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