11N10G
MOSFET. Datasheet pdf. Equivalent
Type Designator: 11N10G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
TO-252
11N10G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
11N10G
Datasheet (PDF)
..1. Size:1143K gfd
11n10g.pdf 
11N10GGeneral Description The 11N10G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Application
9.1. Size:1313K goford
11n10c.pdf
GOFORD11N10CGeneral Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Applicatio
9.3. Size:1709K gfd
11n10.pdf
11N10DESCRIPTIONThe 11N10 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)100V 7.8m 110Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =100V,ID =110ARDS(ON)
9.4. Size:302K ncepower
ncep11n10as.pdf
NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim
9.5. Size:717K ncepower
ncep11n10aqu.pdf
http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON
9.6. Size:363K ncepower
ncep11n10ak.pdf
http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo
9.7. Size:333K ncepower
ncep11n10agu.pdf
http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V
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