16N60A Specs and Replacement
Type Designator: 16N60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 134.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
Package: TO-220AB
16N60A substitution
- MOSFET ⓘ Cross-Reference Search
16N60A datasheet
16n60a 16n60af 16n60b.pdf
RoHS 16N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, D fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such a... See More ⇒
ixzr16n60a ixzr16n60b.pdf
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56 ... See More ⇒
tman16n60a.pdf
TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A ... See More ⇒
tmp16n60a tmpf16n60a.pdf
TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A ... See More ⇒
Detailed specifications: 11N10G, 11P50A, 12N50A, 12N60A, 12N60AF, 13N110A, 13N60A, 13N60AF, 75N75, 16N60AF, 16N60B, 19MT050XFAPBF, 1HN04CH, 1HP04CH, 1N60AF, 1N60E, 1N60F
Keywords - 16N60A MOSFET specs
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History: APM9410K | STF13NM50N
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