SFU2955 Datasheet and Replacement
Type Designator: SFU2955
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO251
- MOSFET Cross-Reference Search
SFU2955 Datasheet (PDF)
sfr2955 sfu2955.pdf

SFR/U2955Advanced Power MOSFETFEATURESFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.6 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.22 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute
Datasheet: SFS9624 , SFS9630 , SFS9634 , SFS9640 , SFS9644 , SFS9Z14 , SFS9Z24 , SFS9Z34 , IRF640 , SFU9014 , SFU9024 , SFU9034 , SFU9110 , SFU9120 , SFU9130 , SFU9210 , SFU9214 .
History: KNF7650A | F5F90HVX2 | MTBA5N10FP | MEE4294HP-G | IPD80R900P7 | SVGP104R5NS | F5001H
Keywords - SFU2955 MOSFET datasheet
SFU2955 cross reference
SFU2955 equivalent finder
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History: KNF7650A | F5F90HVX2 | MTBA5N10FP | MEE4294HP-G | IPD80R900P7 | SVGP104R5NS | F5001H



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