All MOSFET. BLM2305 Datasheet

 

BLM2305 Datasheet and Replacement


   Type Designator: BLM2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT-23
 

 BLM2305 substitution

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BLM2305 Datasheet (PDF)

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blm2305.pdf pdf_icon

BLM2305

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2ADS D RDS(ON)

 8.1. Size:218K  belling
blm2302.pdf pdf_icon

BLM2305

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D

 8.2. Size:235K  belling
blm2301.pdf pdf_icon

BLM2305

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR

Datasheet: BFD63 , BFD71 , BFD77 , BFD82 , BFD88 , BLM138K , BLM2301 , BLM2302 , IRF540 , BLM3400 , BLM3401 , BLM3401A , BLM3407 , BLM3407A , BLM3415 , BLM4435 , BLM4953 .

History: MEE4294K

Keywords - BLM2305 MOSFET datasheet

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