BLM2305 Datasheet and Replacement
Type Designator: BLM2305
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT-23
BLM2305 substitution
BLM2305 Datasheet (PDF)
blm2305.pdf

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2ADS D RDS(ON)
blm2302.pdf

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D
blm2301.pdf

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR
Datasheet: BFD63 , BFD71 , BFD77 , BFD82 , BFD88 , BLM138K , BLM2301 , BLM2302 , IRF540 , BLM3400 , BLM3401 , BLM3401A , BLM3407 , BLM3407A , BLM3415 , BLM4435 , BLM4953 .
History: MEE4294K
Keywords - BLM2305 MOSFET datasheet
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History: MEE4294K



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