BLM3401A MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM3401A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-23
BLM3401A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM3401A Datasheet (PDF)
blm3401a.pdf
Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -4.4A DS DR
blm3401.pdf
P-Channel Enhancement BLM3401 Mode MOSFET BLM3401BLM3401 BLM3401FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other
blm3400.pdf
Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide Dexcellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS
blm3407a.pdf
Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.3A DS DR
blm3407.pdf
Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLF7G22LS-130
History: BLF7G22LS-130
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