BLM3401A Datasheet and Replacement. Cross Reference Search

BLM3401A Datasheet (PDF)

..1. Size:190K belling
blm3401a.pdf pdf_icon

Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -4.4A DS DR

7.1. Size:190K belling
blm3401.pdf pdf_icon

P-Channel Enhancement BLM3401 Mode MOSFET BLM3401BLM3401 BLM3401FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other

8.1. Size:78K belling
blm3400.pdf pdf_icon

Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide Dexcellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS

8.2. Size:215K belling
blm3407a.pdf pdf_icon

Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.3A DS DR