BLM3407 MOSFET Datasheet: P-Ch, 30V, 4.1A. Full specification with pinout and replacement list

BLM3407 Specs and Replacement

Type Designator: BLM3407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT-23

BLM3407 substitution

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BLM3407 datasheet

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Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS D R ... See More ⇒

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Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS ... See More ⇒

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