All MOSFET. BLM9435A Datasheet

 

BLM9435A Datasheet and Replacement


   Type Designator: BLM9435A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: SOP-8
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BLM9435A Datasheet (PDF)

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BLM9435A

Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM9435A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS DR

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BLM9435A

BLM9435 Power MOSFET 1Description Step-Down Converter The BLM9435 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -30 V DSI -5.1 A DR .TYP 48 m DS(ON)@-10V R .TYP 70 m DS(ON)@-4.5V FEATURES High power and current handi

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History: VBNC1303 | IRFS4010PBF

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