BUK445-400A Datasheet and Replacement
Type Designator: BUK445-400A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220F
BUK445-400A substitution
BUK445-400A Datasheet (PDF)
buk445-400ab.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-400A/BDESCRIPTIONDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
buk445-60h.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22.5 AAutomotive applications, Switched Ptot Total power dissipatio
buk445-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK445-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK445 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 7.6 7 A
Datasheet: BUK436-800A , BUK436-800B , BUK438-500A , BUK438-500B , BUK444-600A , BUK444-600B , BUK445-100A , BUK445-100B , P60NF06 , BUK445-400B , BUK445-600A , BUK445-600B , FMV09N70E , FRK250 , FRM230 , FRM240 , IPP015N04N .
Keywords - BUK445-400A MOSFET datasheet
BUK445-400A cross reference
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History: IRFU110P | CS730FA9H



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