All MOSFET. IPP037N06L3 Datasheet

 

IPP037N06L3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP037N06L3
   Marking Code: 037N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 167 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
   Maximum Drain Current |Id|: 90 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 59 nC
   Rise Time (tr): 78 nS
   Drain-Source Capacitance (Cd): 1700 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0037 Ohm
   Package: TO220

 IPP037N06L3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP037N06L3 Datasheet (PDF)

 ..1. Size:246K  inchange semiconductor
 ipp037n06l3.pdf

IPP037N06L3 IPP037N06L3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP037N06L3IIPP037N06L3FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

 0.1. Size:475K  infineon
 ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf

IPP037N06L3 IPP037N06L3

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

 6.1. Size:1018K  infineon
 ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP037N06L3 IPP037N06L3

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

 6.2. Size:494K  infineon
 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP037N06L3 IPP037N06L3

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 6.3. Size:246K  inchange semiconductor
 ipp037n08n3.pdf

IPP037N06L3 IPP037N06L3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP037N08N3IIPP037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUT

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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