All MOSFET. SFU9224 Datasheet

 

SFU9224 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFU9224
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251

 SFU9224 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFU9224 Datasheet (PDF)

 ..1. Size:269K  fairchild semi
 sfu9224 sfr9224.pdf

SFU9224 SFU9224

SFR/U9224Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 8.1. Size:257K  fairchild semi
 sfr9220 sfu9220.pdf

SFU9224 SFU9224

SFR/U9220Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.1 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:309K  fairchild semi
 sfu9214 sfr9214.pdf

SFU9224 SFU9224

SFR/U9214Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.53 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) 2112331. Gate 2. Drain 3. SourceAbs

 9.2. Size:256K  fairchild semi
 sfr9210 sfu9210.pdf

SFU9224 SFU9224

SFR/U9210Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

Datasheet: SFU9024 , SFU9034 , SFU9110 , SFU9120 , SFU9130 , SFU9210 , SFU9214 , SFU9220 , P55NF06 , SFU9310 , SFW2955 , SFW9510 , SFW9520 , SFW9530 , SFW9540 , SFW9610 , SFW9614 .

History: BUK6607-75C

 

 
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