IRF250P225 PDF and Equivalents Search

 

IRF250P225 Specs and Replacement

Type Designator: IRF250P225

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 505 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO247AC

IRF250P225 substitution

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IRF250P225 datasheet

 ..1. Size:1059K  infineon
irf250p225.pdf pdf_icon

IRF250P225

IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS R DS(on) typ. 18m G max 22m Applications S I 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC ... See More ⇒

 ..2. Size:242K  inchange semiconductor
irf250p225.pdf pdf_icon

IRF250P225

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225 IIRF250P225 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

 5.1. Size:1062K  infineon
irf250p224.pdf pdf_icon

IRF250P225

IRF250P224 MOSFET StrongIRFET V 250V D DSS R DS(on) typ. 9.0m G Applications max 12m UPS and Inverter applications S I 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits... See More ⇒

 5.2. Size:241K  inchange semiconductor
irf250p224.pdf pdf_icon

IRF250P225

isc N-Channel MOSFET Transistor IRF250P224 IIRF250P224 FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒

Detailed specifications: IPP80CN10N, IPW60R060C7, IPW60R070CFD7, IPW60R080P7, IPW60R099P7, IPW60R120C7, IPW60R170CFD7, IRF200P223, AOD4184A, IRF60B217, IRF630NSTRRPBF, IRFP4127, IRFP4868, IRFP7537, IRFP7718, IRL40B212, IRL40B215

Keywords - IRF250P225 MOSFET specs

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