IRF630NSTRRPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF630NSTRRPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 82 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 9.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 89 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
IRF630NSTRRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF630NSTRRPBF Datasheet (PDF)
irf630nlpbf irf630npbf irf630nspbf irf630nstrrpbf.pdf
PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec
irf630nstrrpbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de
irf630npbf irf630nspbf irf630nlpbf.pdf
PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec
irf630ns.pdf
Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irf630n.pdf
PD - 94005AIRF630NIRF630NSIRF630NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature DVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.30 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced proces
irf630nl.pdf
Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
irf630n.pdf
isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2SK3847 | SI4812DY | 2SK3530 | STP4441 | IRFS9142
History: 2SK3847 | SI4812DY | 2SK3530 | STP4441 | IRFS9142
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