HY3906B Datasheet and Replacement
Type Designator: HY3906B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1014 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-263
HY3906B substitution
HY3906B Datasheet (PDF)
hy3906p hy3906b.pdf

HY3906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.2 m(typ.) @ VGS=10V 100% avalanche testedSD Reliable and Rugged GSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Mar
hy3906w hy3906a.pdf

HY3906W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 2.6 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N Channel MOSFETOrdering and Mar
hy3906p-b.pdf

HY3906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.2 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching applicationG N-Channel MOSFET Power Management for Inverter Systems.S
Datasheet: TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M , HY3810B , HY3810PS , HY3810PM , HY3906P , TK10A60D , HYG067N07NQ1P , HYG067N07NQ1B , HYG067N07NQ1PS , IPP07N03L , IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F .
History: DJR0417
Keywords - HY3906B MOSFET datasheet
HY3906B cross reference
HY3906B equivalent finder
HY3906B lookup
HY3906B substitution
HY3906B replacement
History: DJR0417



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