HYG067N07NQ1B Specs and Replacement
Type Designator: HYG067N07NQ1B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 233.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-263
HYG067N07NQ1B substitution
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HYG067N07NQ1B datasheet
hyg067n07nq1.pdf
HYG067N07NQ1P/B/PS N-Channel Enhancement Mode MOSFET Feature Pin Description 68V/80A RDS(ON)= 6.5m (typ.)@VGS = 10V 100% Avalanche Tested S D Reliable and Rugged G Lead-Free and Green Devices Available S S D D G G (RoHS Compliant) TO-220FB-3L TO-3PS-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Switch... See More ⇒
hyg065n15ns1p hyg065n15ns1b.pdf
HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa... See More ⇒
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf
HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching... See More ⇒
hyg064n08na1p hyg064n08na1b.pdf
HYG064N08NA1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)= 6.4m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged S D Lead-Free and Green Devices Available G S (RoHS Compliant) D G TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Ma... See More ⇒
Detailed specifications: HY3810P, HY3810M, HY3810B, HY3810PS, HY3810PM, HY3906P, HY3906B, HYG067N07NQ1P, 12N60, HYG067N07NQ1PS, IPP07N03L, IPB07N03L, IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG, SVF4N65M
Keywords - HYG067N07NQ1B MOSFET specs
HYG067N07NQ1B cross reference
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HYG067N07NQ1B substitution
HYG067N07NQ1B replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK2549 | WML15N65F2 | FDD6644 | FDB3632
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