HYG067N07NQ1PS Datasheet and Replacement
Type Designator: HYG067N07NQ1PS
Marking Code: G067N07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 114.8 nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 233.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-3PS
HYG067N07NQ1PS substitution
HYG067N07NQ1PS Datasheet (PDF)
hyg067n07nq1.pdf

HYG067N07NQ1P/B/PSN-Channel Enhancement Mode MOSFETFeature Pin Description 68V/80ARDS(ON)= 6.5m(typ.)@VGS = 10V 100% Avalanche TestedSD Reliable and RuggedG Lead-Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-220FB-3L TO-3PS-3L TO-263-2LApplications Portable equipment and battery powered systems DC-DC Converters Switch
hyg065n15ns1p hyg065n15ns1b.pdf

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching
hyg064n08na1p hyg064n08na1b.pdf

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma
Datasheet: HY3810M , HY3810B , HY3810PS , HY3810PM , HY3906P , HY3906B , HYG067N07NQ1P , HYG067N07NQ1B , 4435 , IPP07N03L , IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG , SVF4N65M , VP0300M .
History: FDMS3664S | WMK028N10HG2 | MMBFJ202 | DMG1024UV | IRFU18N15DPBF
Keywords - HYG067N07NQ1PS MOSFET datasheet
HYG067N07NQ1PS cross reference
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HYG067N07NQ1PS substitution
HYG067N07NQ1PS replacement
History: FDMS3664S | WMK028N10HG2 | MMBFJ202 | DMG1024UV | IRFU18N15DPBF



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