IPP07N03L Specs and Replacement
Type Designator: IPP07N03L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ -
Output Capacitance: 740 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-220
- MOSFET ⓘ Cross-Reference Search
IPP07N03L datasheet
..1. Size:162K infineon
ipp07n03l ipb07n03l.pdf 
IPP07N03L IPB07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 5.9 m Logic Level ID 80 A Low On-Resistance RDS(on) P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ideal for f... See More ⇒
9.2. Size:1542K infineon
ipp076n15n5.pdf 
IPP076N15N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 150 V tab Features Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and... See More ⇒
9.5. Size:571K infineon
ipp076n12n3g ipi076n12n3g.pdf 
$ " " $$ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D R ( 492??6= ?@C>2= =6G6= 7 m D n)m x R I46==6?E 82E6 492C86 I AC@5F4E !) ' D n) 1 D R /6CJ =@H @? C6D DE2?46 D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 92=@86? 7C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@?@FD C64E... See More ⇒
9.6. Size:545K infineon
ipi076n12n3g ipp076n12n3g.pdf 
IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati... See More ⇒
9.7. Size:1013K infineon
ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf 
IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒
9.9. Size:316K infineon
ipp072n10n3-g ipi072n10n3-g.pdf 
IPP072N10N3 G IPI072N10N3 G OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 7.2 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Id... See More ⇒
9.11. Size:424K infineon
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf 
IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 7.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar... See More ⇒
9.12. Size:244K inchange semiconductor
ipp075n15n3.pdf 
isc N-Channel MOSFET Transistor IPP075N15N3 IIPP075N15N3 FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R... See More ⇒
9.13. Size:245K inchange semiconductor
ipp076n15n5.pdf 
isc N-Channel MOSFET Transistor IPP076N15N5 IIPP076N15N5 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
9.15. Size:246K inchange semiconductor
ipp072n10n3.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP072N10N3 IIPP072N10N3 FEATURES Static drain-source on-resistance RDS(on) 7.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE... See More ⇒
9.16. Size:245K inchange semiconductor
ipp076n12n3.pdf 
isc N-Channel MOSFET Transistor IPP076N12N3 IIPP076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Detailed specifications: HY3810B, HY3810PS, HY3810PM, HY3906P, HY3906B, HYG067N07NQ1P, HYG067N07NQ1B, HYG067N07NQ1PS, IRF1010E, IPB07N03L, IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG, SVF4N65M, VP0300M, CEPF630
Keywords - IPP07N03L MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.