All MOSFET. SFW9630 Datasheet

 

SFW9630 MOSFET. Datasheet pdf. Equivalent

Type Designator: SFW9630

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 6.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 740 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO263

SFW9630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SFW9630 说明书

1.1. sfw9630.pdf Size:501K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 0.581 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

4.1. sfw9634.pdf Size:502K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology ? RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) : 0.876 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.1. sfw9620.pdf Size:504K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 1.111 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

5.2. sfw9640.pdf Size:506K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 0.344 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.3. sfw9624.pdf Size:502K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) : 1.65 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.4. sfw9614.pdf Size:506K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) : 3.5 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.5. sfw9610.pdf Size:497K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology ? RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.75 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 2.084 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

Datasheet: SFW9510 , SFW9520 , SFW9530 , SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , IRFP064N , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443D , SI3812DV .

 


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