BSC014N04LS MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC014N04LS
Marking Code: 014N04LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: PG-TDSON-8
BSC014N04LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC014N04LS Datasheet (PDF)
bsc014n04ls.pdf
BSC014N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.4 mW Very low on-state resistance RDS(on)ID 100 A 100% avalanche testedQoss 54 nC Superior thermal resistanceQg(0V..10V) 61 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications(
bsc014n04lsi.pdf
BSC014N04LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.45 mW Integrated monolithic Schottky-like diodeA ID 100 Very low on-resistance RDS(on)QOSS 53 nC 100% avalanche tested55 nC QG(0V..10V) N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target a
bsc014n06nssc.pdf
BSC014N06NSSCMOSFETPG-WSON-8-2OptiMOSTM Power-Transistor, 60 VFeatures Double side cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-free ac
bsc014n06ns.pdf
TypeBSC014N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 1.45 mW Superior thermal resistanceID 100 A N-channelQOSS nC 100 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 89 Pb-free lead plating; RoHS compliantPG-
bsc014n03ls .pdf
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bsc014n03ls.pdf
BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc014n03lsg.pdf
BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc014n03msg.pdf
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bsc014n03ms.pdf
BSC014N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 1.4mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 1.75GS 100% avalanche testedI 100 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R prod
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