SFW9Z14 MOSFET Datasheet: P-Ch, 60V, 6.7A. Full specification with pinout and replacement list

SFW9Z14 Specs and Replacement

Type Designator: SFW9Z14

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO263

SFW9Z14 substitution

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SFW9Z14 datasheet

..1. Size:279K fairchild semi
sfi9z14 sfw9z14.pdf pdf_icon

SFW/I9Z14 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.362 (Typ.) 1 1 2 3 3 1. Gate... See More ⇒

..2. Size:498K samsung
sfw9z14.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -60V Low RDS(ON) 0.362 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute... See More ⇒

9.1. Size:281K fairchild semi
sfi9z24 sfw9z24.pdf pdf_icon

SFW/I9Z24 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.206 (Typ.) 1 1 2 3 3 1. Gate ... See More ⇒

9.2. Size:286K fairchild semi
sfw9z34tm.pdf pdf_icon

SFW/I9Z34 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175oC Operating Temperature 2 Lower Leakage Current 10 A(Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain... See More ⇒