All MOSFET. SFW9Z14 Datasheet

 

SFW9Z14 Datasheet and Replacement


   Type Designator: SFW9Z14
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO263
 

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SFW9Z14 Datasheet (PDF)

 ..1. Size:279K  fairchild semi
 sfi9z14 sfw9z14.pdf pdf_icon

SFW9Z14

SFW/I9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)112331. Gate

 ..2. Size:498K  samsung
 sfw9z14.pdf pdf_icon

SFW9Z14

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.362 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute

 9.1. Size:281K  fairchild semi
 sfi9z24 sfw9z24.pdf pdf_icon

SFW9Z14

SFW/I9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -9.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)112331. Gate

 9.2. Size:286K  fairchild semi
 sfw9z34tm.pdf pdf_icon

SFW9Z14

SFW/I9Z34Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A(Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain

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Datasheet: SFW9610 , SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , SFW9644 , IRF4905 , SFW9Z24 , SFW9Z34 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY , SI4435DY .

History: MEE6240T | NTMFS5C673NLT1G

Keywords - SFW9Z14 MOSFET datasheet

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 SFW9Z14 equivalent finder
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