BSC016N03MS PDF Specs and Replacement
Type Designator: BSC016N03MS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 2600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: PG-TDSON-8
BSC016N03MS substitution
BSC016N03MS PDF Specs
bsc016n03ms.pdf
BSC016N03MS G Product Summary OptiMOS 3 M-Series Power-MOSFET V 30 V DS Features R V =10 V 1.6 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 2 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product... See More ⇒
bsc016n03msg.pdf
% ! % # %?88, G D ON S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5 3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD... See More ⇒
bsc016n03ls .pdf
& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 1 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= Q &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2... See More ⇒
Detailed specifications: BSC011N03LSI , BSC014N03LS , BSC014N03MS , BSC014N04LS , BSC014N04LSI , BSC014N06NS , BSC014NE2LSI , BSC016N03LS , SKD502T , BSC016N06NS , BSC018NE2LSI , BSC019N02KS , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS .
Keywords - BSC016N03MS MOSFET specs
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