All MOSFET. BSC016N03MS Datasheet

 

BSC016N03MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC016N03MS
   Marking Code: 016N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 2600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: PG-TDSON-8

 BSC016N03MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC016N03MS Datasheet (PDF)

 ..1. Size:194K  infineon
bsc016n03ms.pdf

BSC016N03MS
BSC016N03MS

BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

 0.1. Size:542K  infineon
bsc016n03msg.pdf

BSC016N03MS
BSC016N03MS

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 5.1. Size:385K  infineon
bsc016n03ls.pdf

BSC016N03MS
BSC016N03MS

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 5.2. Size:679K  infineon
bsc016n03ls .pdf

BSC016N03MS
BSC016N03MS

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 5.3. Size:387K  infineon
bsc016n03lsg.pdf

BSC016N03MS
BSC016N03MS

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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