BSC020N03LS PDF Specs and Replacement
Type Designator: BSC020N03LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: PG-TDSON-8
BSC020N03LS substitution
BSC020N03LS PDF Specs
bsc020n03ls.pdf
BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsc020n03ls .pdf
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bsc020n03lsg.pdf
BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsc020n03ms.pdf
BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product... See More ⇒
Detailed specifications: BSC014N06NS , BSC014NE2LSI , BSC016N03LS , BSC016N03MS , BSC016N06NS , BSC018NE2LSI , BSC019N02KS , BSC019N04LS , 5N65 , BSC020N03MS , BSC022N04LS , BSC025N03LS , BSC025N03MS , BSC026N02KS , BSC026N04LS , BSC026N08NS5 , BSC026NE2LS5 .
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