BSC025N03LS Datasheet. Specs and Replacement

Type Designator: BSC025N03LS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.2 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: PG-TDSON-8

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BSC025N03LS datasheet

 ..1. Size:382K  infineon
bsc025n03ls.pdf pdf_icon

BSC025N03LS

BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super... See More ⇒

 ..2. Size:685K  infineon
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BSC025N03LS

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @... See More ⇒

 0.1. Size:384K  infineon
bsc025n03lsg.pdf pdf_icon

BSC025N03LS

BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super... See More ⇒

 5.1. Size:194K  infineon
bsc025n03ms.pdf pdf_icon

BSC025N03LS

BSC025N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary V 30 V Features DS R V =10 V 2.5 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 3 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (... See More ⇒

Detailed specifications: BSC016N03MS, BSC016N06NS, BSC018NE2LSI, BSC019N02KS, BSC019N04LS, BSC020N03LS, BSC020N03MS, BSC022N04LS, AON6380, BSC025N03MS, BSC026N02KS, BSC026N04LS, BSC026N08NS5, BSC026NE2LS5, BSC028N06NS, BSC030N03LS, BSC030N03MS

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