BSC025N03LS PDF Specs and Replacement
Type Designator: BSC025N03LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.2 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: PG-TDSON-8
BSC025N03LS substitution
BSC025N03LS PDF Specs
bsc025n03ls.pdf
BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super... See More ⇒
bsc025n03ls .pdf
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bsc025n03lsg.pdf
BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super... See More ⇒
bsc025n03ms.pdf
BSC025N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary V 30 V Features DS R V =10 V 2.5 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 3 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (... See More ⇒
Detailed specifications: BSC016N03MS , BSC016N06NS , BSC018NE2LSI , BSC019N02KS , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , AON6380 , BSC025N03MS , BSC026N02KS , BSC026N04LS , BSC026N08NS5 , BSC026NE2LS5 , BSC028N06NS , BSC030N03LS , BSC030N03MS .
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