BSC098N10NS5 PDF and Equivalents Search

 

BSC098N10NS5 Specs and Replacement

Type Designator: BSC098N10NS5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: PG-TDSON-8

BSC098N10NS5 substitution

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BSC098N10NS5 datasheet

 ..1. Size:1185K  infineon
bsc098n10ns5.pdf pdf_icon

BSC098N10NS5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSC098N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSC098N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal ... See More ⇒

 9.1. Size:816K  infineon
bsc0902ns.pdf pdf_icon

BSC098N10NS5

BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8 ... See More ⇒

 9.2. Size:1085K  infineon
bsc096n10ls5.pdf pdf_icon

BSC098N10NS5

BSC096N10LS5 MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Optimized for chargers Product validation Fully quali... See More ⇒

 9.3. Size:521K  infineon
bsc090n03lsg.pdf pdf_icon

BSC098N10NS5

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒

Detailed specifications: BSC0904NSI, BSC0910NDI, BSC0911ND, BSC0921NDI, BSC0923NDI, BSC0924NDI, BSC0925ND, BSC097N06NS, AO4468, BSC100N03MS, BSC117N08NS5, BSC120N03LS, BSC120N03MS, BSC150N03LD, BSC252N10NSF, BSC500N20NS3G, BSD214SN

Keywords - BSC098N10NS5 MOSFET specs

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