2SK1580 Datasheet and Replacement

   Type Designator: 2SK1580
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SC70

2SK1580 substitution

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2SK1580 Datasheet (PDF)

..1. Size:144K 1
2sk1580.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1580SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1580 is an N -channel vertical type MOS FET which 2.10.1can be driven by 2.5 V power supply. 1.250.1 As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and

8.1. Size:302K 1
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2sk1582.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1582SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1582, N-channel vertical type MOS FET, is a 2.8 0.2switching device which can be driven directly by the output of +0.10.65 0.151.5ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is 2suitable for use as a

8.7. Size:405K 1
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1581SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1581, N-channel vertical type MOS FET, can be 2.8 0.2driven by 2.5 V power supply. +0.10.65 0.151.5 As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances 2including VCR cam

8.8. Size:296K nec
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2sk1584 nec.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1584N-CHANNEL MOS FETFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1584 is a switching device which can be driven directlyby a 5-V power source.4.50.1 ElectrodeConnection The 2SK1584 features a low on-state resistance and excellent1.50.11.60.2 1.Sourceswitching characteristics, and is suitable for applicati

8.10. Size:1044K kexin
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SMD Type MOSFETN-Channel MOSFET2SK15881.70 0.1 Features VDS (V) = 16V ID = 3 A0.42 0.10.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 3A Puls

8.11. Size:1254K kexin
2sk1582-3.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1582SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 4V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 3 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

8.12. Size:1205K kexin
2sk1589-3.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1589SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.1 A1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 30 (VGS = 4V)+0.11.9 -0.2 RDS(ON) 25 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

8.13. Size:1297K kexin
2sk1584.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15841.70 0.1 Features VDS (V) = 30V ID = 0.5 A0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS = 10V) RDS(ON) 2 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Pul

8.14. Size:1170K kexin
2sk1583.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15831.70 0.1 Features VDS (V) = 16V ID = 0.5 A0.42 0.1 RDS(ON) 2 (VGS = 2.5V) 0.46 0.1 RDS(ON) 1.5 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 0.5A Pul

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2sk1587.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15871.70 0.1 Features VDS (V) = 16V ID = 2 A RDS(ON) 0.5 (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 2A Puls

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SMD Type MOSFETN-Channel MOSFET2SK15851.70 0.1 Features VDS (V) = 16V ID = 1 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 1.2 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 1A Pulsed

8.17. Size:1007K kexin
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SMD Type MOSFETN-Channel MOSFET2SK15861.70 0.1 Features VDS (V) = 30V ID = 1 A RDS(ON) 0.6 (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1A Pulsed

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SMD Type MOSFETN-Channel MOSFET2SK1581SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 16V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 3 (VGS = 4V) 1.9 -0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

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SMD Type MOSFETN-Channel MOSFET2SK1589SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.1 A1 2 RDS(ON) 30 (VGS = 4V) +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 25 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 1

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2sk1582.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1582SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 0.2 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 5 (VGS = 4V)+0.11.9-0.1 RDS(ON) 3 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

8.21. Size:976K kexin
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SMD Type MOSFETN-Channel MOSFET2SK1581SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 16V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 2.5V) +0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 3 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

8.22. Size:1614K cn vbsemi
2sk1588.pdf pdf_icon

2SK1588www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

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2SK1589-T1Bwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 20

Datasheet: 2SK1497 , 2SK1498 , 2SK1499 , 2SK1500 , 2SK1501 , 2SK1502 , 2SK1549-R , 2SK1553-01MR , MMD60R360PRH , 2SK1581 , 2SK1582 , 2SK1583 , 2SK1584 , 2SK1585 , 2SK1586 , 2SK1587 , 2SK1588 .