BSO200P03S MOSFET Datasheet: P-Ch, 30V, 7.4A. Full specification with pinout and replacement list

BSO200P03S Specs and Replacement

Type Designator: BSO200P03S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SO-8

BSO200P03S substitution

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BSO200P03S datasheet

..1. Size:326K infineon
bso200p03sh bso200p03s bso200p03s .pdf pdf_icon

BSO200P03S H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS P-Channel R 20 m DS(on),max Enhancement mode I -9.1 A D Logic level 150 C operating temperature PG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halo... See More ⇒

8.1. Size:653K infineon
bso200n03s rev1.7 g.pdf pdf_icon

BSO200N03S "9@/; %;+877+;B Features V DS Q 2CD CG D49 ?8 ') - . 7@B -'*- m DS(on) max Q ) AD > J65 D649?@=@8I 7@B ?@D63@@... See More ⇒

8.2. Size:640K infineon
bso200n03 v1.4 g.pdf pdf_icon

BSO200N03 "9@/; %;+877+;B Features V DS P 1BC BF9C389>7 &( , - 6?A ,&), m DS(on) max P ( @C9=9I54 C538>?B P DSO 8 -85A=135 D>3C9?> B?7 @?9>C -85A=135 D>3C9?> 1=295>C P G35... See More ⇒

8.3. Size:877K cn vbsemi
bso200n03s.pdf pdf_icon

BSO200N03S www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒