BSO200P03S Datasheet and Replacement
Type Designator: BSO200P03S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO-8
BSO200P03S substitution
BSO200P03S Datasheet (PDF)
bso200p03sh bso200p03s bso200p03s .pdf
BSO200P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 20mDS(on),max Enhancement modeI -9.1 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking Lead free Halo
bso200n03s rev1.7 g.pdf
BSO200N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*-m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@
bso200n03 v1.4 g.pdf
BSO200N03 "9@/; %;+877+;BFeatures VDSP 1BC BF9C389>7 &( , - 6?A ,&),m DS(on) maxP ( @C9=9I54 C538>?BPDSO8-85A=135 :D>3C9?> B?7 @?9>C-85A=135 :D>3C9?> 1=295>CP G35
bso200n03s.pdf
BSO200N03Swww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: BSL306N , BSL308C , BSL316C , BSL606SN , BSL802SN , BSL806N , BSN20-7 , BSN20BK , IRFP260 , BSO201SP , BSO203P , BSO203SP , BSO207P , BSO211P , BSO220N03MD , BSO301SP , BSO303P .
History: SMF10N65 | IPA060N06NM5S | TDM3405 | WMN36N65F2
Keywords - BSO200P03S MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SMF10N65 | IPA060N06NM5S | TDM3405 | WMN36N65F2
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