BSP123 Datasheet and Replacement

Rev. 1.5BSP123SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 6 Enhancement modeID 0.37 A Logic LevelPG-SOT223 dv/dt ratedPb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and Reel Information Marking PackagingPG-SOT223 Non dryBSP123 L6433: 4000 pcs/reel BSP123BSP123

DISCRETE SEMICONDUCTORSDATA SHEETBSP128N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP128D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS dra

DISCRETE SEMICONDUCTORSDATA SHEETBSP126N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP126D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 250 Vvertical D

DISCRETE SEMICONDUCTORSDATA SHEETBSP122N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP122D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS dra

DISCRETE SEMICONDUCTORSDATA SHEETBSP126N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP126D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 250 Vvertical D

DISCRETE SEMICONDUCTORSDATA SHEETBSP120N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP120D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 200 Vvertical D

DISCRETE SEMICONDUCTORSDATA SHEETBSP127N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP127D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS dra

DISCRETE SEMICONDUCTORSDATA SHEETBSP121N-channel enhancement modevertical D-MOS transistor1998 Apr 01Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP121D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain source vo

DISCRETE SEMICONDUCTORSDATA SHEETBSP121N-channel enhancement modevertical D-MOS transistor1998 Apr 01Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP121D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain source vo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSP 125SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 125 600 V 0.12 A 45 SOT-223 BSP 125Type Ordering Code Tape and Reel InformationBSP 125 Q62702-S654 E6327BSP 125 Q67000-S284 E6433Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS

BSP129SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 240 V N-channelRDS(on),max 6 W Depletion modeIDSS,min 0.05 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead plating; RoHS compliantPG-SOT223 Qualified according to AEC Q101Type Package Tape and Reel Marking Packaging Type Package Tape and Reel Marking Pac

Rev. 2.1BSP125SIPMOS Power-TransistorProduct SummaryFeatureVDS 600 V N-ChannelRDS(on) 45 Enhancement modeID 0.12 A Logic LevelPG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking PackagingType Package RoHS compliant Tape and Reel InformationBSP125 PG-SOT223 Yes L6433: 4000 pcs/reel BSP125 No

BSP122www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSDGS