All MOSFET. BSP297 Datasheet

 

BSP297 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSP297
   Marking Code: BSP297
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 0.66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.9 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT-223

 BSP297 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSP297 Datasheet (PDF)

 ..1. Size:372K  infineon
bsp297.pdf

BSP297
BSP297

Rev. 2.1BSP297SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 200 V N-ChannelRDS(on) 1.8 Enhancement modeID 0.66 A Logic LevelPG-SOT223 dv/dt ratedPb-free lead plating; RoHS compliant4 Qualified according to AEC Q101 321VPS05163PackagingType Package Tape and Reel Information MarkingPG-SOT223BSP297 L6327: 1000 pcs/reel

 9.1. Size:169K  siemens
bsp299.pdf

BSP297
BSP297

BSP 299SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 299 500 V 0.4 A 4 SOT-223 BSP 299Type Ordering Code Tape and Reel InformationBSP 299 Q67000-S225 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA

 9.2. Size:170K  siemens
bsp298.pdf

BSP297
BSP297

BSP 298SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 298 400 V 0.5 A 3 SOT-223 BSP 298Type Ordering Code Tape and Reel InformationBSP 298 Q67000-S200 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA

 9.3. Size:318K  infineon
bsp299.pdf

BSP297
BSP297

BSP299SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 299 500 V 0.4 A 4 SOT-223 BSP299Type Pb-free Tape and Reel InformationBSP 299 Yes L6327Maximum Ratings

 9.4. Size:381K  infineon
bsp295.pdf

BSP297
BSP297

Rev 2.2BSP295SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS60 V N-ChannelRDS(on) 0.3 Enhancement modeID 1.8 A dv/dt ratedPG-SOT223Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 4321 VPS05163MarkingType Package Tape and Reel Information Marking PackagingPG-SOT223BSP295 L6327: 1000 pcs/reel BSP295 Non dryMaximum

 9.5. Size:373K  infineon
bsp298.pdf

BSP297
BSP297

BSP298SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP298 400 V 0.5 A 3 PG-SOT223 BSP298Type Pb-free Tape and Reel Information PackagingBSP298 Yes L6327 DryMax

 9.6. Size:298K  infineon
bsp296.pdf

BSP297
BSP297

Rev. 2.1BSP296SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 0.7 Enhancement modeID 1.1 A Logic LevelPG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant4 Qualified according to AEC Q101 321 VPS05163Type Package Tape and Reel Information Marking PackagingPG-SOT223BSP296 L6433: 4000 pcs/reel

 9.7. Size:569K  infineon
bsp296n.pdf

BSP297
BSP297

BSP296NOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max VGS=10 V 0.6 W Enhancement modeVGS=4.5 V 0.8 Logic level (4.5V rated)ID 1.2 A Avalanche rated Qualified according to AEC Q101PG-SOT223 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Tape and Reel Informati

 9.8. Size:860K  cn vbsemi
bsp296.pdf

BSP297
BSP297

BSP296www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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