SI4818DY MOSFET PDF: N-Ch, 30V, 5.3(7)A. Full specification with pinout and replacement list

SI4818DY PDF Specs and Replacement

   Type Designator: SI4818DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3(7) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(0.0155) Ohm
   Package: SO8

SI4818DY substitution

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SI4818DY PDF Specs

..1. Size:271K vishay
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Si4818DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 6.3 LITTLE FOOT Plus Channel-1 0.030 at VGS = 4.5 V 5.4 Compliant to RoHS directive 2002/95/EC 30 0.0155 at VGS = 10 V 9.5 Channel-2 0.0205 at VGS = 4.5 ... See More ⇒

9.1. Size:261K vishay
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Si4816BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Available 0.0185 at VGS = 10 V 6.8 LITTLE FOOT Plus Power MOSFET Channel-1 7.8 0.0225 at VGS = 4.5 V 6.0 100 % Rg Tested 30 0.0115 at VGS = 10 V 11.4 Channel-2 11.6 0.016 a... See More ⇒

9.2. Size:259K vishay
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9.3. Size:96K vishay
si4814dy.pdf pdf_icon

Si4814DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout 0.021 @ VGS = 10 V 7.0 Channel 1 Channel-1 Options 0.0325 @ VGS = 4.5 V 5.6 30 30 D 100% Rg Tested 0.020 @ VGS = 10 V 7.4 Channel 2 Channel-2 APPLICATIONS 0.0265 @... See More ⇒