BSS123TA Datasheet and Replacement

SOT23 N-CHANNEL ENHANCEMENTBSS123MODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 PARTMARKING DETAIL SASDGSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VDrain-Gate Voltage VDGR 100 VContinuous Drain Current at Tamb=25C ID 170 mAPulsed Drain Current IDM 680 mAGate-Source Voltage VGS 20 VPeak Gate-Source Voltage VGSM

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS123LT1/DTMOS FET TransistorBSS123LT1NChannel3 DRAINMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 100 VdcCASE 31808, STYLE 21SOT23 (TO236AB)GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp

Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Extremely fast switching VDSS = 100 V Logic level compatible Subminiature surface mounting ID = 150 mApackagegRDS(ON) 6 (VGS = 10 V)sGENERAL DESCRIPTION PINNING SOT23N-channel enhancemen

BSS123LT1Preferred DevicePower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures Pb-Free Packages are Available170 mAMPS100 VOLTSRDS(on) = 6 WN-Channel3MAXIMUM RATINGSRating Symbol Value UnitDrain-Source Voltage VDSS 100 VdcGate-Source Voltage 1- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current Adc2-

DISCRETE SEMICONDUCTORSDATA SHEETBSS123N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSS123D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER CONDITIONS MAX. UNITet

June 2003BSS123N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral DescriptionThese N-Channel enhancement mode field effect 0.17 A, 100 V. RDS(ON) = 6 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary,RDS(ON) = 10 @ VGS = 4.5 Vhigh cell density, DMOS technology. These productshave been designed to minimize on-state resist

June 2003BSS123N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral DescriptionThese N-Channel enhancement mode field effect 0.17 A, 100 V. RDS(ON) = 6 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary,RDS(ON) = 10 @ VGS = 4.5 Vhigh cell density, DMOS technology. These productshave been designed to minimize on-state resist

EI ectri caI Characteri sti cs(TA = 25C unl ess ot herwi se not ed)Sept ember 1996SymbI Parameter Cndi ti ns Type Min Typ Max UnitsOFF CHARACTERI STI CSBVDSS Drai n- Source Breakdown Vol t age VGS = 0 V, ID= 250 A All 100 VBSS100IDSS Zero Gat e Vol t age Drai n Current VDS = 100 V,VGS= 0 V 15 ABSS100 / BSS123VDS = 100 V,VGS= 0 V BSS123 1 AN ChanneI Lgi c LeveI

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Threshold Voltage V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance 100V 170mA 6.0 @ VGS = 10V Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Description Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Hal

BSS123N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low Gate Threshold Voltage Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low In

BSS123N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 100V 6.0 @ VGS = 10V 0.17 Low Input/Output Leakage High Drain-Source Voltage Rating Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 and 2

BSS123WN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Threshold Voltage Case: SOT323 Low Input Capacitance Case Material: Molded Plastic, "Green" Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections:

BSS 123SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3G S DType VDS ID RDS(on) Package MarkingBSS 123 100 V 0.17 A 6 SOT-23 SAsType Ordering Code Tape and Reel InformationBSS 123 Q62702-S512 E6327BSS 123 Q67000-S245 E6433Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS

Rev. 1.41BSS123SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 6 Enhancement modeID 0.17 A Logic LevelPG-SOT23 dv/dt rated3Drainpin 3Gate Qualified according to AEC Q101pin12Sourcepin 21VPS05161Type Package Pb-free Tape and Reel Information MarkingPG-SOT23 YesBSS123 L6327: 3000 pcs/reel SAs

BSS123NOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max VGS=10 V 6 W Enhancement modeVGS=4.5 V 10 Logic level (4.5V rated)ID 0.19 A Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant, Halogen free3 1 2 Marking Type Package Tape and Reel Information Halogon F

BSS123N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral DescriptionThese N-Channel enhancement mode field effect 0.17 A, 100 V. RDS(ON) = 6 @ VGS = 10 Vtransistors are produced using ON Semiconductors RDS(ON) = 10 @ VGS = 4.5 Vproprietary, high cell density, DMOS technology. These products have been designed to minimize on- High de

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET SOT-23ID V(BR)DSS RDS(on)MAX 6@10V100V0.17A @4.5V101. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Small Servo Motor Controls Surface Mount Package Power MOSFET Gate Drivers High Density Cell Design for Extremely Low RDS

BSS123N-Channel MOSFET321. Gate2. Source13. DrainFeatures Simplified outline(SOT-23)VDS (V) =100VDID =0.17 A(VGS = 10V)RDS(ON) 6 (VGS =10V)RDS(ON) 10 (VGS =4.5V)ESD Protected 2KV HBMGSAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 100VGate-Source Voltage VGS 20Continuous Drain Current ID 0.17APulsed Dr

BSS123Power MOSFETN-Channel3 DRAINSOT-23Features:31*Low On-Resistance : 6.0 GATE1 *Low Input Capacitance: 20PF2*Low Out put Capacitance : 9PF 2SOURCE*Low Threshole :2.8V*Fast Switching Speed : 20nsApplication:* DC to DC Converter* Cellular & PCMCIA Card* Cordless Telephone* Power Management in Portable and Battery etc.Maximum Ratings (TA=25 C Unles

FM120-M WILLASTHRUBSS123LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VN-CHANNEL POWER MOSFETSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board s

Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp. Revised Date : 2018.06.20 Page No. : 1/8 N-CHANNEL MOSFET BVDSS 100V ID@VGS=10V, TA=25C 1.7A 290m BSS123N3 VGS=10V, ID=700mA 310m VGS=4V, ID=400mA RDSON(TYP) 260m VGS=10V, ID=170mA 280m VGS=4V, ID=170mA Description The BSS123N3 is a N-channel enhancement-mode MOSFET. Features

BSS123K2 Rev.A May.-2022 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV,HF Product. / Applications

LESHAN RADIO COMPANY, LTD.N-CHANNEL POWER MOSFETLBSS123LT1GLBSS123LT1GS-LBSS123LT1GFEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping LBSS123LT1G3000/Tape&ReelSA

SMD Type MOSFETN-Channel MOSFETBSS123 SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.17 A (VGS = 10V)1 2 RDS(ON) 6 (VGS = 10V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 10 (VGS = 4.5V)+0.11.9 -0.11. Gate2. Source3. DrainDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit D

GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS123 is the N-Channel enhancement 100V/0.1A , RDS(ON)=6.0@VGS=10V mode field effect transistors are produced using SOT-23 package design high cell density DMOS technology. Lead(Pb)-FreeThese products have been designed to minimize on-state resistance while provide rugged, reliable, and

http://www.ncepower.com BSS123KNCE N-Channel Enhancement Mode Power MOSFET General Features VDS = 100 V,ID = 0.17A RDS(ON)

BSS123N-Channel Power MOSFET MAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV 100 VDSSGate- Source Voltage V +20 VGSDrain Current-continuous I 150 mADRDrain Current-pulsed I 600 mADRMTHERMAL CHARACTERISTICSCharacteristicSymbol Max UnitPDTotal Device Dissipation 250 mWTA=25Derate above25 1.8 mW/RThermal Resistance Junct

BSS123 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 5.0@10V 100V 0.2A 5.5@4.5V Feature Application Advanced trench process technology Small Servo Motor Controls Voltage Controlled Small Signal Switch Power MOSFET Gate Drivers Switching Application Package Circuit diagram SOT-23 Marking B123. Document ID Issued Date Revised Date Re

BSS123MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=10V 5V Logic Level Control N Channel SOT23 Package HMB ESD Protection Pb-Free, RoHS CompliantApplications V R Typ I Max (BR)DSS DS(ON) D Relay DriverON/OFF Switch3.5 @ 10V 100V 0.2A High-speed line Driver4 @ 4.5V Power Management in Portab

BSS123N-Channel SMD MOSFETProduct SummaryV R I(BR)DSS DS(on)MAX D3.0@10V100V 200mA3.5@4.5VFeature Application Advanced trench process technology Small Servo Motor Controls Voltage Controlled Small Signal Switch Power MOSFET Gate Drivers Switching ApplicationPackage Circuit diagramSOT-23MarkingB123www.fuxinsemi.com Page 1 Ver2.1BSS123N-Ch

WSTBSS123N-Ch MOSFETProduct SummeryGeneral Description The WSTBSS123 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 100V 210m 2.0Adensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSTBSS123 meet the RoHS and Green High Frequency Point-of-L

BSS123-7-Fwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 200

RoHS COMPLIANT BSS123 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 200mA D R ( at V =10V) 5.0ohm DS(ON) GS R ( at V =4.5V) 5.5ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch High density cell design for low R DS(ON) Fast Switching Spe

BSS123N-CHANNEL POWER MOSFETBSS123FEATURE3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1DEVICE MARKING AND ORDERING INFORMATION2SOT-23Device Marking Shipping BSS123 SA 3000/Tape&Reel Drain3. 1GateMAXIMUM RATINGSRating Symbol Value