All MOSFET. BSZ025N04LS Datasheet

 

BSZ025N04LS Datasheet and Replacement


   Type Designator: BSZ025N04LS
   Marking Code: 025N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TSDSON-8FL
 

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BSZ025N04LS Datasheet (PDF)

 ..1. Size:1401K  infineon
bsz025n04ls.pdf pdf_icon

BSZ025N04LS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 40 VBSZ025N04LSTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche test

 9.1. Size:1519K  infineon
bsz024n04ls6.pdf pdf_icon

BSZ025N04LS

BSZ024N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

 9.2. Size:709K  infineon
bsz028n04ls.pdf pdf_icon

BSZ025N04LS

BSZ028N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-

 9.3. Size:1521K  infineon
bsz021n04ls6.pdf pdf_icon

BSZ025N04LS

BSZ021N04LS6MOSFETTSDSON-8 FLOptiMOSTM6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi

Datasheet: BSS816NW , BSS84-7 , BSS84AKMB , BSS84TA , BSS84TC , BST72A , BSZ014NE2LS5IF , BSZ018NE2LS , IRFB4227 , BSZ028N04LS , BSZ034N04LS , BSZ035N03LS , BSZ035N03MS , BSZ036NE2LS , BSZ042N06NS , BSZ0501NSI , BSZ0506NS .

History: STP8NK85Z

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