BSZ0901NS PDF and Equivalents Search

 

BSZ0901NS Specs and Replacement

Type Designator: BSZ0901NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TSDSON-8FL

BSZ0901NS substitution

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BSZ0901NS datasheet

 ..1. Size:681K  infineon
bsz0901ns.pdf pdf_icon

BSZ0901NS

For BSZ0901NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 2.0 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 2.6 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 (fused leads) Very low on-resistance R @ ... See More ⇒

 0.1. Size:617K  infineon
bsz0901nsi.pdf pdf_icon

BSZ0901NS

BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.1 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha... See More ⇒

 8.1. Size:1453K  infineon
bsz0909ns rev3.2.pdf pdf_icon

BSZ0901NS

n-Channel Power MOSFET OptiMOS BSZ0909NS Data Sheet 3.2, 2011-09-22 Final Industrial & Multimarket OptiMOS Power-MOSFET BSZ0909NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS ... See More ⇒

 8.2. Size:676K  infineon
bsz0908nd.pdf pdf_icon

BSZ0901NS

BSZ0908ND PowerStage 3x3 Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Enhancement mode RDS(on),max VGS=10 V 18 9 mW Logic level (4.5V rated) VGS=4.5 V 25 13 Avalanche rated ID 19 30 A 100% Lead-free; RoHS compliant PG-WISON-8 Halogen-free according to IEC61249-2-21 Type Package Marking Lead Free BSZ0908ND PG-WISON-8 090... See More ⇒

Detailed specifications: BSZ050N03LS, BSZ050N03MS, BSZ058N03LS, BSZ058N03MS, BSZ060NE2LS, BSZ065N03LS, BSZ075N08NS5, BSZ084N08NS5, AO3401, BSZ0901NSI, BSZ0902NS, BSZ0902NSI, BSZ0904NSI, BSZ0907ND, BSZ0908ND, BSZ097N10NS5, BSZ110N08NS5

Keywords - BSZ0901NS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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